SiC and Ferro-silicides Formation in Tuyere Cokes

simulation and experimental studies for prediction mineral scale formation in oil field during mixing of injection and formation water

abstract: mineral scaling in oil and gas production equipment is one of the most important problem that occurs while water injection and it has been recognized to be a major operational problem. the incompatibility between injected and formation waters may result in inorganic scale precipitation in the equipment and reservoir and then reduction of oil production rate and water injection rate. ...

Characterization and Modeling of Stress Evolution during Nickel Silicides Formation

An curvature measurement technique was used to characterize the stress evolution during reaction of a Ni film and a silicon substrate to form nickel silicide. Stress changes were measured at each stage of the silicide growth. When the nickel films were subjected to longtime isothermal annealing, stresses that developed during silicide formation gradually relaxed. Fitting the experimental result...

Borides, Silicides and Phosphicles

This paper reviews some recent studies of the borides, silicides and phosphides of the platinum metals. These phases, especially those with a high metal content, have very similar properties. After some general information on the binary systems, brief comments are made on the preparation and properties of the intermediate phases while some features of their crystal chemistry are presented in mo...

Oxidation of ZrB2-SiC Composites at 1600 °C: Effect of Carbides, Borides, Silicides, and Chopped Carbon Fiber

The aim of this work is to optimize the oxidation resistance of ZrB2-SiC-based composites with different additives. Effect of nine factors including SiC, Cf, MoSi2, HfB2 and ZrC contents, milling time of Cf (M.t) and SPS parameters such as temperature, time and pressure on oxidation resistance in four levels was investigated. Taguchi design was applied to explore effective parameters for ...

Graphene formation mechanisms on 4H-SiC(0001)